Open AccessOptimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination
Author(s) -
Rinat Yapparov,
Cheyenne Lynsky,
Shuji Nakamura,
James S. Speck,
S. Marcinkevičius
Publication year - 2020
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.35848/1882-0786/abc856
Subject(s) - recombination , auger effect , quantum well , photoluminescence , optoelectronics , materials science , electron , work (physics) , carrier lifetime , auger , condensed matter physics , chemistry , physics , atomic physics , optics , silicon , laser , biochemistry , quantum mechanics , gene , thermodynamics
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