Open AccessFormation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing
Author(s) -
Keita Tachiki,
Mitsuaki Kaneko,
Takuma Kobayashi,
Tsunenobu Kimoto
Publication year - 2020
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.35848/1882-0786/abc6ed
Subject(s) - annealing (glass) , etching (microfabrication) , materials science , oxidation process , fabrication , deposition (geology) , analytical chemistry (journal) , nanotechnology , chemical engineering , chemistry , layer (electronics) , metallurgy , medicine , paleontology , alternative medicine , pathology , chromatography , sediment , engineering , biology
We formed SiC/SiO 2 structures by various procedures that excluded an oxidation process. We found that a SiC/SiO 2 interface with a low interface state density near the conduction band edge of SiC ( D it ∼ 4 × 10 10 cm −2 eV −1 at E c −0.2 eV) is obtained for a fabrication process consisting of H 2 etching of the SiC surface, SiO 2 deposition, and high-temperature N 2 annealing. D it is rather high without H 2 etching, indicating that etching before SiO 2 deposition plays a significant role in reducing D it . The key to obtaining low D it may be the removal of oxidation-induced defects near the SiC surface.