Open AccessDesign and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation
Author(s) -
Takuma Kobayashi,
Takashi Okuda,
Keita Tachiki,
Kõji Ito,
Yu Ichiro Matsushita,
Tsunenobu Kimoto
Publication year - 2020
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.35848/1882-0786/ababed
Subject(s) - oxidizing agent , annealing (glass) , materials science , deposition (geology) , oxidation state , nitrogen , silicon carbide , etching (microfabrication) , analytical chemistry (journal) , chemical engineering , chemistry , nanotechnology , metallurgy , metal , geology , layer (electronics) , environmental chemistry , paleontology , organic chemistry , engineering , sediment
We report an effective approach to reduce defects at a SiC/SiO 2 interface. Since oxidation of SiC may inevitably lead to defect creation, the idea is to form the interface without oxidizing SiC. Our method consists of four steps: (i) H 2 etching of SiC, (ii) Si deposition, (iii) low-temperature (∼750 °C) oxidation of Si to form SiO 2 , and (iv) high-temperature (∼1600 °C) N 2 annealing to introduce nitrogen atoms. The interface state density estimated by a high (1 MHz)–low method is in the order of 10 10 cm −2 eV −1 , two orders of magnitude lower than that of an interface formed by SiC oxidation.