Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation | Zendy

Takuma Kobayashi | Zendy; Takafumi Okuda | Zendy; Keita Tachiki | Zendy; Kōji Itō | Zendy; Yuichiro Matsushita | Zendy; Tsunenobu Kimoto | Zendy

Open Access

Design and formation of SiC (0001)/SiO₂ interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation

Author(s) -

Takuma Kobayashi,

Takafumi Okuda,

Keita Tachiki,

Kōji Itō,

Yuichiro Matsushita,

Tsunenobu Kimoto

Publication year - 2020

Publication title -

applied physics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.911

H-Index - 94

eISSN - 1882-0786

pISSN - 1882-0778

DOI - 10.35848/1882-0786/ababed

Subject(s) - oxidizing agent , annealing (glass) , materials science , deposition (geology) , oxidation state , nitrogen , etching (microfabrication) , analytical chemistry (journal) , chemical engineering , nanotechnology , chemistry , metallurgy , metal , layer (electronics) , environmental chemistry , geology , paleontology , organic chemistry , engineering , sediment

We report an effective approach to reduce defects at a SiC/SiO 2 interface. Since oxidation of SiC may inevitably lead to defect creation, the idea is to form the interface without oxidizing SiC. Our method consists of four steps: (i) H 2 etching of SiC, (ii) Si deposition, (iii) low-temperature (∼750 °C) oxidation of Si to form SiO 2 , and (iv) high-temperature (∼1600 °C) N 2 annealing to introduce nitrogen atoms. The interface state density estimated by a high (1 MHz)–low method is in the order of 10 10 cm −2 eV −1 , two orders of magnitude lower than that of an interface formed by SiC oxidation.

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