Reliability characteristics of metal/ferroelectric-HfO2/IGZO/metal capacitor for non-volatile memory application | Zendy

Fei Mo | Zendy; Takuya Saraya | Zendy; Toshiro Hiramoto | Zendy; Masaharu Kobayashi | Zendy

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Reliability characteristics of metal/ferroelectric-HfO₂/IGZO/metal capacitor for non-volatile memory application

Author(s) -

Fei Mo,

Takuya Saraya,

Toshiro Hiramoto,

Masaharu Kobayashi

Publication year - 2020

Publication title -

applied physics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.911

H-Index - 94

eISSN - 1882-0786

pISSN - 1882-0778

DOI - 10.35848/1882-0786/ab9a92

Subject(s) - capacitor , materials science , ferroelectricity , reliability (semiconductor) , metal , optoelectronics , ferroelectric capacitor , data retention , layer (electronics) , non volatile memory , composite material , electrical engineering , voltage , metallurgy , power (physics) , engineering , physics , quantum mechanics , dielectric

A metal/ferroelectric (FE)-HfO 2 /IGZO/metal capacitor was fabricated and investigated for 3D high-density memory application. The sharp interface is obtained without atomic interdiffusion. The capacitor shows ferroelectricity with a IGZO capping layer. The endurance and retention measurement show that the capacitor has up to 10 8 program/erase endurance cycles and a 10 year retention, respectively. The capacitor does not show the wake-up effect, which is beneficial for circuit design and manufacturing. The asymmetric imprint effect is attributed to the different band modulation in the accumulation and depletion states of IGZO.

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