Open AccessReliability characteristics of metal/ferroelectric-HfO2/IGZO/metal capacitor for non-volatile memory application
Author(s) -
Fei Mo,
Takuya Saraya,
Toshiro Hiramoto,
Masaharu Kobayashi
Publication year - 2020
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.35848/1882-0786/ab9a92
Subject(s) - capacitor , materials science , ferroelectricity , reliability (semiconductor) , metal , optoelectronics , ferroelectric capacitor , data retention , layer (electronics) , non volatile memory , composite material , electrical engineering , voltage , metallurgy , power (physics) , engineering , physics , quantum mechanics , dielectric
A metal/ferroelectric (FE)-HfO 2 /IGZO/metal capacitor was fabricated and investigated for 3D high-density memory application. The sharp interface is obtained without atomic interdiffusion. The capacitor shows ferroelectricity with a IGZO capping layer. The endurance and retention measurement show that the capacitor has up to 10 8 program/erase endurance cycles and a 10 year retention, respectively. The capacitor does not show the wake-up effect, which is beneficial for circuit design and manufacturing. The asymmetric imprint effect is attributed to the different band modulation in the accumulation and depletion states of IGZO.