Open AccessMarked improvement in reliability of 150 °C processed IGZO thin-film transistors by applying hydrogenated IGZO as a channel material
Author(s) -
Daichi Koretomo,
Shuhei Hamada,
M. Mori,
Yusaku Magari,
Mamoru Furuta
Publication year - 2020
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.35848/1882-0786/ab9478
Subject(s) - thin film transistor , materials science , annealing (glass) , transistor , reliability (semiconductor) , optoelectronics , hysteresis , field effect , nanotechnology , electrical engineering , voltage , composite material , condensed matter physics , layer (electronics) , power (physics) , physics , engineering , quantum mechanics
A marked improvement in the reliability of a high-mobility In–Ga–Zn–O (IGZO) thin-film transistor (TFT) is presented after 150 °C annealing by applying hydrogenated IGZO (IGZO:H) as a channel. To enhance field-effect mobility ( μ FE ), the atomic ratio of In:Ga:Zn was chosen to be 6:2:1. The IGZO:H TFT exhibited a μ FE of 18.9 cm 2 V −1 s −1 without hysteresis. Moreover, the reliability of the IGZO:H TFT significantly improved after 150 °C annealing as compared with that of a conventional IGZO TFT. Thus, the use of IGZO:H is an effective method of improving both the electrical properties and reliability of TFTs for flexible electronics.