Open AccessAnalysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
Author(s) -
Kalparupa Mukherjee,
Matteo Borga,
Maria Ruzzarin,
Carlo De Santi,
Steve Stoffels,
Shuzhen You,
Karen Geens,
Hu Liang,
Stefaan Decoutere,
Gaudenzio Meneghesso,
Enrico Zai,
Matteo Meneghini
Publication year - 2020
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.35848/1882-0786/ab6ddd
Subject(s) - trapping , materials science , threshold voltage , optoelectronics , trench , stress (linguistics) , transistor , insulator (electricity) , silicon on insulator , wavelength , shallow trench isolation , voltage , transient (computer programming) , silicon , nanotechnology , physics , layer (electronics) , ecology , linguistics , philosophy , quantum mechanics , computer science , biology , operating system
We present a first study of threshold voltage instabilities of semi-vertical GaN-on-Si trench-MOSFETs, based on double pulsed, threshold voltage transient, and UV-assisted C – V analysis. Under positive gate stress, small negative V th shifts (low stress) and a positive V th shifts (high stress) are observed, ascribed to trapping within the insulator and at the metal/insulator interface. Trapping effects are eliminated through exposure to UV light; wavelength-dependent analysis extracts the threshold de-trapping energy ≈2.95 eV. UV-assisted CV measurements describe the distribution of states at the GaN/Al 2 O 3 interface. The described methodology provides an understanding and assessment of trapping mechanisms in vertical GaN transistors.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom