Open AccessVariation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding
Author(s) -
Yutaka Ohno,
Jianbo Liang,
Hideto Yoshida,
Yasuo Shimizu,
Y. Nagai,
Naoteru Shigekawa
Publication year - 2022
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.35848/1347-4065/ac5d11
Subject(s) - materials science , annealing (glass) , silicon , impurity , diamond , amorphous solid , getter , silicon carbide , crystallography , metallurgy , optoelectronics , chemistry , organic chemistry
Chemical composition around diamond/silicon heterointerfaces fabricated by surface activated bonding (SAB) at room temperature is examined by energy-dispersive X-ray spectroscopy under scanning transmission electron microscopy. Iron impurities segregate just on the bonding interfaces, while oxygen impurities segregate off the bonding interfaces in the silicon side by 3–4 nm. Oxygen atoms would segregate so as to avoid the amorphous compound with silicon and carbon atoms, self-organized at the bonding interfaces in the SAB process. When the bonding interfaces are annealed at 1000 °C, the amorphous compound converts into cubic silicon carbide (c-SiC), and nano-voids 5–15 nm in size are formed at the region between silicon and c-SiC, at which the oxygen density is high before annealing. The nano-voids can act as the gettering sites in which metal impurities are preferentially agglomerated, and the impurity gettering would help to improve the electronic properties of the bonding interfaces by annealing.