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In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on  c -plane ScAlMgO 4  substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to suppress island growth and to achieve uniform mirror-like Ga-polar GaN layers. The preflow time was found to have a direct impact on the crystalline quality of GaN. We also show that thin GaN layers directly grown at high temperature can be used as buffers for the growth of lattice-matched In 0.17 Ga 0.83 N layers on ScAlMgO 4 . The presented results demonstrate the potential of direct growth of GaN on ScAlMgO 4 .

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Direct high-temperature growth of single-crystalline GaN on ScAlMgO₄ substrates by metalorganic chemical vapor deposition