Open AccessIon-induced interface defects in a-Si:H/c-Si heterojunction: possible roles and kinetics of hot mobile hydrogens
Author(s) -
Shota Nunomura,
Takayoshi Tsutsumi,
Kazuya Nakane,
Aiko Sato,
Isao Sakata,
Masaru Hori
Publication year - 2022
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.35848/1347-4065/ac5210
Subject(s) - dangling bond , heterojunction , materials science , silicon , diffusion , amorphous solid , ion , etching (microfabrication) , deposition (geology) , amorphous silicon , optoelectronics , crystalline silicon , crystallography , chemistry , nanotechnology , layer (electronics) , thermodynamics , organic chemistry , biology , physics , paleontology , sediment
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom