Bi-stable toggle switching in magnetic tunnel junctions using sub-nanosecond Joule heat pulses
Author(s) -
Yuma Kaneda,
Minori Goto,
Tomohito Mizuno,
Takekazu Yamane,
Naomichi Degawa,
Tsuyoshi Suzuki,
Atsushi Shimura,
Susumu Aoki,
Junichiro Urabe,
Shinji Hara,
Hikaru Nomura,
Yoshishige Suzuki
Publication year - 2022
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.35848/1347-4065/ac4c4f
Subject(s) - magnetization , nanosecond , joule heating , condensed matter physics , materials science , joule (programming language) , magnetic anisotropy , switching time , perpendicular , anisotropy , tunnel magnetoresistance , magnetic field , physics , optoelectronics , ferromagnetism , optics , thermodynamics , geometry , laser , power (physics) , mathematics , quantum mechanics , composite material
In this study, bi-stable toggle magnetization switching in magnetic tunnel junctions induced by electrically injected sub-nanosecond unipolar heat pulses was demonstrated. The switching probability of magnetization between bi-stable states was estimated by applying 0.5 ns voltage pulses and measuring the perpendicular component of the magnetization direction. The maximum switching probability was approximately 70%, suggesting that bi-stable toggle magnetization switching was induced by the torque created by the Joule-heat-induced magnetic anisotropy change. Joule-heat-driven magnetization switching has the potential to become a fundamental technology for fast spin control.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom