Open AccessMethod for noncontact measurement of 2DEG mobility and carrier density in AlGaN/GaN on semi-insulating wafers
Author(s) -
Marshall Wilson,
Dmitriy Marinskiy,
Jacek Lagowski,
Carlos Almeida,
Alexandre Savtchouk,
Duc Hanh Nguyên,
Mark C. Benjamin
Publication year - 2022
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.35848/1347-4065/ac41ca
Subject(s) - wafer , sheet resistance , materials science , optoelectronics , heterojunction , sapphire , charge carrier density , biasing , electron mobility , condensed matter physics , voltage , nanotechnology , electrical engineering , optics , physics , layer (electronics) , laser , engineering , doping
We present a charge-assisted sheet resistance technique for noncontact wafer level determination of two-dimensional electron gas (2DEG) mobility versus sheet carrier density without any test structures or gates. Instead, the electrical biasing of the 2DEG is provided by surface charge deposition, using a corona charging method. Analysis of the sheet resistance versus deposited charge identifies the 2DEG full depletion condition and enables calculation of the 2DEG sheet carrier density required for the mobility. Results for AlGaN/GaN heterostructures on semi-insulating SiC and sapphire substrates show good agreement with Hall results at a zero-bias condition.