Open AccessImprovement of self-heating effect in Ge vertically stacked GAA nanowire pMOSFET by utilizing Al2O3 for high-performance logic device and electrical/thermal co-design
Author(s) -
Young Suh Song,
Sangwan Kim,
Garam Kim,
Hyunwoo Kim,
Jongho Lee,
Jang Hyun Kim,
ByungGook Park
Publication year - 2021
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.35848/1347-4065/abec5c
Subject(s) - nanowire , materials science , optoelectronics , transistor , equivalent oxide thickness , field effect transistor , dielectric , mosfet , leakage (economics) , logic gate , thermal , gate dielectric , high κ dielectric , nanotechnology , gate oxide , electrical engineering , voltage , engineering , physics , meteorology , economics , macroeconomics
For improving self-heating effect (SHE) in Ge vertically stacked gate-all-around (GAA) nanowire (NW) p-type metal-oxide-semiconductor field-effect transistor (pMOSFET), aluminum oxide (Al 2 O 3 , alumina) is utilized for gate dielectric layer. From the high thermal conductivity of Al 2 O 3 , SHE is significantly improved. In order to validate the proposed device structure, technology computer-aided design simulation is performed through Synopsys Sentaurus three-dimensional tool. As a result, when Al 2 O 3 is incorporated in Ge vertically stacked GAA NW pMOSFET, SHE can be remarkably improved from 534 to 419 K. In addition, the method of simultaneously accomplishing improvement of SHE and low gate leakage current ( I gate ) have been specifically investigated and proposed with numerous simulation data.
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