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For improving self-heating effect (SHE) in Ge vertically stacked gate-all-around (GAA) nanowire (NW) p-type metal-oxide-semiconductor field-effect transistor (pMOSFET), aluminum oxide (Al 2 O 3 , alumina) is utilized for gate dielectric layer. From the high thermal conductivity of Al 2 O 3 , SHE is significantly improved. In order to validate the proposed device structure, technology computer-aided design simulation is performed through Synopsys Sentaurus three-dimensional tool. As a result, when Al 2 O 3  is incorporated in Ge vertically stacked GAA NW pMOSFET, SHE can be remarkably improved from 534 to 419 K. In addition, the method of simultaneously accomplishing improvement of SHE and low gate leakage current ( I gate ) have been specifically investigated and proposed with numerous simulation data.

japanese journal of applied physics

Improvement of self-heating effect in Ge vertically stacked GAA nanowire pMOSFET by utilizing Al<sub>2</sub>O<sub>3</sub> for high-performance logic device and electrical/thermal co-design

Improvement of self-heating effect in Ge vertically stacked GAA nanowire pMOSFET by utilizing Al2O3 for high-performance logic device and electrical/thermal co-design

Improvement of self-heating effect in Ge vertically stacked GAA nanowire pMOSFET by utilizing Al₂O₃ for high-performance logic device and electrical/thermal co-design