Open AccessImportance of crystallinity improvement in MoS2 film by compound sputtering even followed by post sulfurization
Author(s) -
Shinya Imai,
Tomoyo Hamada,
Masahiko Hamada,
Takanori Shirokura,
Iriya Muneta,
Kuniyuki Kakushima,
Tetsuya Tatsumi,
Shigetaka Tomiya,
Kazuo Tsutsui,
Hitoshi Wakabayashi
Publication year - 2021
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.35848/1347-4065/abdcae
Subject(s) - crystallinity , sputtering , materials science , annealing (glass) , thin film transistor , thin film , optoelectronics , transistor , chemical engineering , analytical chemistry (journal) , nanotechnology , layer (electronics) , composite material , chemistry , chromatography , electrical engineering , engineering , voltage
The MoS 2 film for chip-size area was synthesized by two step processes consisting of MoS 2 -compound sputtering and post sulfurization. We intentionally revealed that the crystallinity of sulfurized MoS 2 film depends on that of just-after-sputtered film. Therefore, a crystallinity improvement just-after sputtering is mandatory to achieve an excellent quality MoS 2 film after sulfur-vapor annealing for thin film transistor, sensor and human interface device applications.