ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact | Zendy

Masaya Hamada | Zendy; Kentaro Matsuura | Zendy; Takuya Hamada | Zendy; Iriya Muneta | Zendy; Kuniyuki Kakushima | Zendy; Kazuo Tsutsui | Zendy; Hitoshi Wakabayashi | Zendy

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ZrS₂ symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact

Author(s) -

Masaya Hamada,

Kentaro Matsuura,

Takuya Hamada,

Iriya Muneta,

Kuniyuki Kakushima,

Kazuo Tsutsui,

Hitoshi Wakabayashi

Publication year - 2020

Publication title -

japanese journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.487

H-Index - 129

eISSN - 1347-4065

pISSN - 0021-4922

DOI - 10.35848/1347-4065/abd6d7

Subject(s) - ambipolar diffusion , schottky barrier , tin , materials science , optoelectronics , work function , electrode , sputtering , annealing (glass) , schottky diode , substrate (aquarium) , electron , thin film , nanotechnology , diode , chemistry , layer (electronics) , physics , oceanography , quantum mechanics , geology , metallurgy , composite material

ZrS 2 amibipolar MISFETs are obtained in operations with both electrons and holes. A layered polycrystalline ZrS 2 thin film was formed by sputtering and sulfur-vapor annealing on a whole surface of a 2.4 cm × 2.4 cm SiO 2 /Si substrate. The ZrS 2 FETs have Al 2 O 3 gate insulator and TiN film for both the top-gate electrode and Schottky-barrier contact, which show symmetrical I d – V gs curves with a V off of 0.4 V contributed by the TiN film with midgap work function to the sputtered ZrS 2 film. Notably, ambipolar FET operations because of both electrons and holes were successfully observed with an on/off current ratio of 250. This is an important step to realize n/p-type unipolar ZrS 2 FETs.

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