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ZrS 2  amibipolar MISFETs are obtained in operations with both electrons and holes. A layered polycrystalline ZrS 2  thin film was formed by sputtering and sulfur-vapor annealing on a whole surface of a 2.4 cm × 2.4 cm SiO 2 /Si substrate. The ZrS 2  FETs have Al 2 O 3  gate insulator and TiN film for both the top-gate electrode and Schottky-barrier contact, which show symmetrical  I d – V gs  curves with a  V off  of 0.4 V contributed by the TiN film with midgap work function to the sputtered ZrS 2  film. Notably, ambipolar FET operations because of both electrons and holes were successfully observed with an on/off current ratio of 250. This is an important step to realize n/p-type unipolar ZrS 2  FETs.

ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact

ZrS₂ symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact