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Scalable chemical vapor deposition (CVD) of two-dimensional semiconducting materials such as MoS 2  and WS 2  is a key technology for the application of these materials in real devices. In this work, we demonstrate the growth behavior of WS 2  crystals from gaseous precursors, i.e. H 2 S and WF 6 , under alkali-metal-free conditions. The WS 2  crystal growth exhibits layer-by-layer growth, and its behaviors, such as nucleation and lateral growth, are a thermally activated process: the temperature-dependent grain size and density are well fitted by the Arrhenius equation. The obtained WS 2  crystal shows quality comparable to that obtained from metal oxides: the WS 2  film shows sharp photoluminescence with a peak width of 54 meV and  n -type field-effect transistor operation. Optimizing the growth conditions enabled us to obtain WS 2  crystals with a grain size of ∼1.5  μ m, which is the largest size ever reported for a transition-metal dichalcogenide grown by gas-source CVD without an alkali-metal promotor.

japanese journal of applied physics

Micrometer-scale WS2 atomic layers grown by alkali metal free gas-source chemical vapor deposition with H2S and WF6 precursors