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Electrical contact characteristics between self-aligned titanium silicide (TiSi 2 ) and sputtered-molybdenum disulfide (MoS 2 ) films were newly demonstrated. In contrast with metal contacts, the surface of the TiSi 2  bottom-contact was cleaned by using an ammonia and hydrogen peroxide mixture (APM) before MoS 2  deposition, because the TiSi 2  film has high oxidation resistance. In order to extract the contact resistance, a transmission line model device was fabricated. A two-order reduction in the contact resistance was achieved by a post-annealing at 650 °C in forming gas ambient (3% H 2  in N 2 ). This reduction was attributed to selective titanium diffusion from bottom contact into the MoS 2  film. The TiSi 2  contact is thus speculated as a candidate for a practical contact material in MoS 2  devices.

Self-aligned-TiSi2 bottom contact with APM cleaning and post-annealing for sputtered-MoS2 film

Self-aligned-TiSi₂ bottom contact with APM cleaning and post-annealing for sputtered-MoS₂ film