Open AccessLow-resistivity vertical current transport across AlInN/GaN interfaces
Author(s) -
Prabha Sana,
Cleophace Seneza,
Christoph Berger,
Hartmut Witte,
Marc-Peter Schmidt,
J. Bläsing,
Silvio Neugebauer,
Florian Hoerich,
A. Dadgar,
A. Strittmatter
Publication year - 2020
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.35848/1347-4065/abd1f7
Subject(s) - doping , ohmic contact , materials science , electrical resistivity and conductivity , heterojunction , epitaxy , optoelectronics , gallium nitride , wide bandgap semiconductor , conduction band , metalorganic vapour phase epitaxy , condensed matter physics , layer (electronics) , nanotechnology , electrical engineering , electron , physics , engineering , quantum mechanics
Effects of n-type doping of Al 0.82 In 0.18 N/GaN heterostructures on the conduction band (CB) profile have been investigated. Doping concentrations well above 10 19 cm −3 are required to reduce the large barriers in the CB. Experimentally, Si- and Ge donor species are compared for n-type doping during metalorganic vapor phase epitaxy. For Si doping, we find substantial interface resistivity that will strongly contribute to total device resistivity. Doping of AlInN is limited by either the onset of a self-compensation mechanism (Si) or structural degradation of the AlInN (Ge). Only by Ge doping, purely ohmic behavior of periodic AlInN/GaN layer stacks could be realized.