Open AccessHydrogen passivation for reduction of SiO2/Si interface state density using hydrocarbon-molecular-ion-implanted silicon wafers
Author(s) -
Ryosuke Okuyama,
Takeshi Kadono,
Ayumi OnakaMasada,
Akihiro Suzuki,
Kôji Kobayashi,
Satoshi Shigematsu,
Ryo Hirose,
Yoshio Koga,
Kazunari Kurita
Publication year - 2020
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.35848/1347-4065/abc3d8
Subject(s) - wafer , materials science , silicon , annealing (glass) , dangling bond , optoelectronics , analytical chemistry (journal) , passivation , hydrogen , chemistry , nanotechnology , organic chemistry , metallurgy , layer (electronics)
The reduction in the density of SiO 2 /Si interface state ( D it ) in the isolation region and transfer transistor gate oxide is necessary to improve the performance of complementary metal-oxide semiconductor (CMOS) image sensors. In this study, we demonstrated that a hydrocarbon-molecular-ion-implanted epitaxial silicon wafer can reduce the D it and Pb 0 center density in SiO 2 /Si interface regions analyzed by quasi-static capacitance–voltage and electron spin resonance measurements, respectively. The D it and Pb 0 center density of wafers without hydrocarbon molecular ions increased after annealing at 700 °C. On the other hand, the D it and Pb 0 center density of wafers implanted with hydrocarbon molecular ions decreased after annealing at 700 °C. We also estimated the activation energy to be 1.67 eV for the hydrogen termination reactions with hydrogen molecules and Si dangling bonds at the SiO 2 /Si interface. The termination effects of the hydrocarbon-molecular-ion-implanted epitaxial silicon wafers can contribute to the high electrical performance of CMOS image sensors.