Open AccessHall-effect mobility enhancement of sputtered MoS2 film by sulfurization even through Al2O3 passivation film simultaneously preventing oxidation
Author(s) -
Masahiko Hamada,
Kentaro Matsuura,
Takumi Sakamoto,
Haruki Tanigawa,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi
Publication year - 2020
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.35848/1347-4065/abb324
Subject(s) - passivation , molybdenum disulfide , materials science , molybdenum , electron mobility , hall effect , aluminium , oxide , analytical chemistry (journal) , chemical engineering , inorganic chemistry , optoelectronics , metallurgy , chemistry , nanotechnology , layer (electronics) , electrical resistivity and conductivity , electrical engineering , organic chemistry , engineering
An aluminum oxide (Al 2 O 3 ) passivation film that prevents the oxidation of a sputtered and sulfurized molybdenum disulfide (MoS 2 ) film was investigated for an enhancement of the Hall-effect mobility. A remarkably high Hall-effect electron mobility value of 100 cm 2 V −1 s −1 was achieved using 3 nm passivation film, as compared to 25 cm 2 V −1 s −1 for an as-deposited MoS 2 film, because sulfurization is able to be yielded even through the Al 2 O 3 film into the MoS 2 film.