Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration | Zendy

Kentaro Matsuura | Zendy; Masaya Hamada | Zendy; Takuya Hamada | Zendy; Haruki Tanigawa | Zendy; Takuro Sakamoto | Zendy; Atsushi Hori | Zendy; Iriya Muneta | Zendy; Takamasa Kawanago | Zendy; Kuniyuki Kakushima | Zendy; Kazuo Tsutsui | Zendy; Atsushi Ogura | Zendy; Hitoshi Wakabayashi | Zendy

Open Access

Normally-off sputtered-MoS₂ nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration

Author(s) -

Kentaro Matsuura,

Masaya Hamada,

Takuya Hamada,

Haruki Tanigawa,

Takuro Sakamoto,

Atsushi Hori,

Iriya Muneta,

Takamasa Kawanago,

Kuniyuki Kakushima,

Kazuo Tsutsui,

Atsushi Ogura,

Hitoshi Wakabayashi

Publication year - 2020

Publication title -

japanese journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.487

H-Index - 129

eISSN - 1347-4065

pISSN - 0021-4922

DOI - 10.35848/1347-4065/aba9a3

Subject(s) - materials science , optoelectronics , annealing (glass) , electrode , titanium nitride , lithography , photolithography , nitride , dielectric , threshold voltage , tin , transistor , nanotechnology , voltage , layer (electronics) , electrical engineering , chemistry , metallurgy , engineering

We demonstrate chip-level integrated n -type metal–insulator–semiconductor field effect transistors with a sputtered molybdenum disulfide (MoS 2 ) thin channel and titanium nitride top-gate electrode, all defined by optical lithography. The devices successfully exhibit a normally-off operation and the highest off-voltage. This is achieved by the single dielectric layer and forming gas annealing, which reduce the positive fixed charges in aluminum oxide (Al 2 O 3 ) film and interface trap densities between the MoS 2 and Al 2 O 3 films, respectively. These normally-off MISFETs are suitable for internet-of-things edge devices with low energy consumption using two-dimensional materials in the future.

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