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This research investigates the cause of lifetime reduction properties of a crystalline defect layer introduced by the plasma process such as reactive plasma deposition (RPD). The plasma irradiation damage to silicon substrate with the different oxygen and carbon concentrations were evaluated. Minority carrier lifetime of the silicon substrate after the RPD process has been significantly reduced by plasma irradiation. Furthermore, photoluminescence (PL) spectroscopy revealed that the cause of the lifetime degradation on the silicon substrate is Ci–Oi defect generation originated in the plasma irradiation during the RPD process.

Evaluation of plasma induced defects on silicon substrate by solar cell fabrication process