Open AccessEnhancement-mode accumulation capacitance–voltage characteristics in TiN/ALD-Al2O3/sputtered-MoS2 top-gated stacks
Author(s) -
Haruki Tanigawa,
Kentaro Matsuura,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi
Publication year - 2020
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.35848/1347-4065/ab7fea
Subject(s) - materials science , dangling bond , annealing (glass) , sputtering , atomic layer deposition , tin , capacitance , analytical chemistry (journal) , optoelectronics , insulator (electricity) , layer (electronics) , thin film , nanotechnology , chemistry , silicon , metallurgy , electrode , chromatography
This study demonstrates atomic layer deposition of an Al 2 O 3 film on a sputtered-MoS 2 film and capacitance–voltage ( C – V ) characteristics of TiN top-gated metal–insulator–semiconductor field-effect-transistors with a sputtered-MoS 2 channel. A uniform Al 2 O 3 film was formed directly on a sputtered-MoS 2 film with no pretreatment. From chemical analysis and surface observation, it is speculated that dangling bonds on a sputtered-MoS 2 surface work as nucleation sites of Al 2 O 3 . The fabricated top-gated stacks show enhancement-mode accumulation C – V characteristics owing to the low carrier density of the MoS 2 film resulting from sputtering and sulfur-powder annealing. This study is the first step for systematic investigation and discussion on not only C – V characteristics but also carrier transport of MoS 2 films.