Open AccessContinuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C
Author(s) -
Shoichi Yoshitomi,
K. Yamanaka,
Yusei Goto,
Yuta Yokomura,
Nobuhiko Nishiyama,
Shigehisa Arai
Publication year - 2020
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.35848/1347-4065/ab7ef2
Subject(s) - wavelength , materials science , transistor , optoelectronics , continuous wave , dissipation , laser , signal (programming language) , electrode , mixing (physics) , thermal management of electronic devices and systems , thermal resistance , optics , thermal , chemistry , electrical engineering , physics , mechanical engineering , quantum mechanics , voltage , computer science , thermodynamics , programming language , engineering , meteorology
A transistor laser (TL) is a device that operates at a high-speed with multiple functions such as output control with low wavelength shift and signal mixing. By adopting a high heat dissipation structure with a high-speed compatible wide electrode pad and thick Au plating in TLs, improvement of temperature performance in 1.3 μ m wavelength npn AlGaInAs/InP TL was demonstrated. As a result, continuous-wave operation of a 1.3 μ m TL up to 90 °C was achieved. The thermal resistance was estimated to be 25 K W −1 , based on the spectrum behavior, which is at least four times lower than the previously observed value.
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