1T semi-floating gate image sensor with enhanced quantum efficiency and high response speed | Zendy

Zi-Liang Tian | Zendy; Chenxi Yue | Zendy; Lin Chen | Zendy; Hao Zhu | Zendy; Qingqing Sun | Zendy; David Wei Zhang | Zendy

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1T semi-floating gate image sensor with enhanced quantum efficiency and high response speed

Author(s) -

Zi-Liang Tian,

Chenxi Yue,

Lin Chen,

Hao Zhu,

Qingqing Sun,

David Wei Zhang

Publication year - 2020

Publication title -

japanese journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.487

H-Index - 129

eISSN - 1347-4065

pISSN - 0021-4922

DOI - 10.35848/1347-4065/ab6e04

Subject(s) - photodiode , sensitivity (control systems) , optoelectronics , image sensor , transistor , quantum efficiency , dark current , materials science , pixel , optics , photodetector , physics , electronic engineering , engineering , quantum mechanics , voltage

The active pixel image sensor based on a semi-floating gate transistor (SFGT-APS) has been proposed and investigated; however, the quantum efficiency (QE) and the sensitivity are too poor to meet low illumination intensity and high-speed application due to the shallow junction of photodiodes. In this work, we demonstrate a new structure, called buried photodiode semi-floating gate transistor active pixel image sensor (BSFGT-APS), which possesses enhanced QE, high sensitivity, and fast response speed. Moreover, BSFGT-APS has the same fill factor with SFGT-APS, which is 55% with a 1 μ m 2 photodiode in 0.13 μ m process. The basic device characteristics were investigated by Sentaurus TCAD simulation, including potential of photodiode, transient response, dark current, conversion gain, and full well capacity.

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