Open AccessThe proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs
Author(s) -
I. Yu. Lovshenko,
A. Yu. Voronov,
Polina Roshchenko,
R. E. Ternov,
Ya. D. Galkin,
А. В. Кунц,
V. R. Stempitsky,
Jinshun Bi
Publication year - 2022
Publication title -
doklady belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Language(s) - English
Resource type - Journals
eISSN - 2708-0382
pISSN - 1729-7648
DOI - 10.35596/1729-7648-2021-19-8-81-86
Subject(s) - high electron mobility transistor , materials science , fluence , proton , flux (metallurgy) , voltage , channel (broadcasting) , transistor , optoelectronics , dual (grammatical number) , field effect transistor , electron , electrical engineering , physics , irradiation , nuclear physics , art , literature , metallurgy , engineering
The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.