Open AccessFormation of a gate dielectric of nanometer thickness by rapid thermal treatment
Author(s) -
N. S. Kovalchuk,
A. A. Omelchenko,
В. А. Пилипенко,
В. А. Солодуха,
Д. В. Шестовский
Publication year - 2021
Publication title -
doklady belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Language(s) - English
Resource type - Journals
eISSN - 2708-0382
pISSN - 1729-7648
DOI - 10.35596/1729-7648-2021-19-4-103-112
Subject(s) - materials science , hydrofluoric acid , rapid thermal processing , wafer , silicon , oxide , thermal oxidation , gate oxide , annealing (glass) , dielectric , oxygen , analytical chemistry (journal) , optoelectronics , composite material , electrical engineering , metallurgy , chemistry , voltage , organic chemistry , transistor , chromatography , engineering
Investigations of the thickness and optical characteristics of thin SiO 2 films obtained by one-, two-, or three-stage rapid thermal processing (RTP) at atmospheric pressure, pulses of 6, 12, and 20 s duration have been carried out. To obtain thin SiO 2 films by the RTP method, N-type:Ph 4.5 Оhm/□ (100) silicon wafers were used as initial samples. The samples were preliminarily oxidized at 1000 °C of the obtained wet oxygen (SiO 2 d = 100 nm), then the silicon oxide was completely removed in a solution of hydrofluoric acid, after which the wafers were subjected to chemical cleaning using the Radio Corporation of America (RCA) technology. Oxidation in a stationary oxygen atmosphere was carried out in one or two stages by heating the plates with a light pulse of different power up to maximum temperatures of 1035 – 1250 °C, as well as a three-stage process, where the final stage was annealing in a nitrogen atmosphere or in a forming gas (N 2 97% + H 2 3%). The characteristics of SiO 2 -Si barrier structures nitrided in N 2 , obtained by the RTP process by light fluxes with pulses of a second duration, were studied to improve the electrophysical parameters of gate oxides by the RTP method. It is of interest for integrated circuits (ICS) with a high density of the active regions of devices.