Open AccessAnálisis de las características Corriente-Voltaje (I-V) en Barreras Schottky de Silicio (p)-Oro
Author(s) -
Jonathan Ortiz-Vázquez,
José Luis Ortiz-Simón,
Gerardo Vázquez-Méndez,
Gustavo Emilio Gustavo Emilio
Publication year - 2019
Publication title -
revista de tecnologías en procesos industriales
Language(s) - English
Resource type - Journals
ISSN - 2523-6822
DOI - 10.35429/jtd.2019.10.3.1.5
Subject(s) - magnetoresistive random access memory , magnetoresistance , schottky diode , materials science , electrical engineering , optoelectronics , magnetic field , physics , random access memory , computer science , engineering , computer hardware , quantum mechanics , diode
The bandwidth, low cost, great storage capacity and performance are characteristics of the random Access Memories (RAM).Some kinds of RAM include ferro-random access memory (FRAM) and magnetoresistive random access memory (MRAM), the latter being of great interest to the scientific community since storage is achieved via magnetic orientation rather than electric orientation. In this paper, we analyze the effect of the application of an external magnetic field on the current-voltage (I-V) characteristics of Schottky barriers made of silicon-gold, to show the effects of magnetoresistance in dispositive semiconductors suited for use as memory storage.