Open AccessExtraction of Series Resistance and Mobility Degradation in MOSFETs Using Iterative Method
Author(s) -
Noureddine Maouhoub,
Khalid Rais
Publication year - 2020
Publication title -
aptikom journal on computer science and information technologies
Language(s) - English
Resource type - Journals
eISSN - 2528-2425
pISSN - 2528-2417
DOI - 10.34306/csit.v5i1.124
Subject(s) - equivalent series resistance , exponential function , attenuation , mosfet , logarithm , series (stratigraphy) , iterative method , materials science , mean squared error , degradation (telecommunications) , electronic engineering , mathematics , algorithm , mathematical analysis , statistics , physics , engineering , optics , voltage , electrical engineering , paleontology , transistor , biology
Series resistance and mobility attenuation parameter are parasitic phenomena that limit the scaling of advanced MOSFETs. In this work, an iterative method is proposed to extract the series resistance and mobility degradation parameter in short channel MOSFETs. It also allows us to extract the surface roughness amplitude. The principle of this method is based on the exponential model of effective mobility and the least squares methods. From these, two analytical equations are obtained to determine the series resistance and the low field mobility as function of the mobility degradation. The mobility attenuation parameter is extracted using an iterative procedure to minimize the root means squared error (RMSE) value. The results obtained by this technique for a single short channel device have shown the good agreement with measurements data at strong inversion.