Open AccessEffect of Variation of Gate Work-Function on Electrical Characteristics of Lightly Doped PMOSFET
Author(s) -
Nitin Sachdeva,
Tarun Kumar Sachdeva,
Neeraj Julka
Publication year - 2019
Publication title -
international journal of future generation communication and networking
Language(s) - English
Resource type - Journals
eISSN - 2207-9645
pISSN - 2233-7857
DOI - 10.33832/ijfgcn.2019.12.4.02
Subject(s) - doping , work function , materials science , work (physics) , function (biology) , optoelectronics , engineering physics , physics , nanotechnology , thermodynamics , layer (electronics) , evolutionary biology , biology