Open AccessRELIEF RECORDING SILVER AT DIRECT LASER EXPOSURE ON THE LAYER OF AMORPHOUS SILICON
Author(s) -
Askar Asanbekovi Kutanov,
Nurbek Sydyk uluu,
З. М. Казакбаева
Publication year - 2019
Publication title -
interèkspo geo-sibirʹ
Language(s) - English
Resource type - Journals
ISSN - 2618-981X
DOI - 10.33764/2618-981x-2019-8-52-56
Subject(s) - materials science , silicon , substrate (aquarium) , amorphous silicon , laser , layer (electronics) , amorphous solid , optoelectronics , semiconductor , sputter deposition , sputtering , optics , crystalline silicon , thin film , nanotechnology , chemistry , crystallography , oceanography , physics , geology
Results of direct laser recording on a two-component medium consisting of deposited layers of amorphous silicon and silver on a glass substrate by magnetron sputtering are presented. A single-mode semiconductor laser with λ = 405 nm for amorphous silicon film on glass substrate with a power of 120 mW is used for direct laser recording on amorphous silicon. Formation of the relief on the silver film with direct recording pulses of a semiconductor laser with λ = 405 nm at the a-Si layer is taken on the electron microscope TESCAN VEGA 3 LMH.