Open AccessMODELING OF RADIATIVE RECOMBINATION IN HETEROSTRUCTURES ON QUANTUM WELLS
Author(s) -
O. F. Zadorozhny,
O. A. Karankevich,
В. Н. Давыдов
Publication year - 2019
Publication title -
interèkspo geo-sibirʹ
Language(s) - English
Resource type - Journals
ISSN - 2618-981X
DOI - 10.33764/2618-981x-2019-6-1-9-15
Subject(s) - recombination , spontaneous emission , charge carrier , quantum well , heterojunction , recombination rate , semiconductor , physics , charge (physics) , doping , radiative transfer , non radiative recombination , condensed matter physics , materials science , atomic physics , computational physics , optoelectronics , semiconductor materials , chemistry , quantum mechanics , laser , biochemistry , gene
It is established that the model of an interzonal radiating recombination in the semiconductor at bipolar injection of charge carriers in which the recombination rate is described by multiply of the complete concentration of charge carriers does not consider the imbalance of concentration of the recombining particles which is physically arising at a doping.