Open AccessMETHOD OF COMPLEX REFLECTION PARAMETERS MEASUREMENT OF TRANSISTOR LOADS USING A SIMULATOR-ANALYZER OF MICROWAVE AMPLIFIERS AND OSCILLATORS
Author(s) -
С. В. Савелькаев,
Nadezhda A. Vikhareva,
Natalia V. Chekotun
Publication year - 2021
Publication title -
vestnik sgugit
Language(s) - English
Resource type - Journals
ISSN - 2411-1759
DOI - 10.33764/2411-1759-2021-26-1-150-162
Subject(s) - calibration , reflection (computer programming) , network analyzer (electrical) , spectrum analyzer , amplifier , computer science , device under test , coaxial , electronic engineering , microwave , reflection coefficient , scattering parameters , engineering , electrical engineering , physics , telecommunications , cmos , quantum mechanics , programming language
The article considers a simulator/analyzer that provides simulation modeling of microwave ampli-fiers and oscillators in accordance with their technical specifications, followed by the measurement of complex load reflection coefficients of the active component of these devices for their design. It also considers a method of measurement of these parameters and a method of calibration of the simula-tor/analyzer providing transfer of measurement results from the coaxial measuring line of the simula-tor-analyzer to the microstrip line. In addition, the article considers a method for analyzing the stability of the active component in the space of complex reflection coefficients of its loads, which facilitates their selection in the simulation of amplifiers and oscillators.