Open AccessBand Gap Energy in Silicon
Author(s) -
J J Low,
Michael L. Kreider,
Drew P. Pulsifer,
Andrew Jones,
Tariq Gilani
Publication year - 2008
Publication title -
american journal of undergraduate research
Language(s) - English
Resource type - Journals
eISSN - 2375-8732
pISSN - 1536-4585
DOI - 10.33697/ajur.2008.010
Subject(s) - silicon , band gap , materials science , range (aeronautics) , energy (signal processing) , condensed matter physics , atmospheric temperature range , silicon bandgap temperature sensor , voltage , constant (computer programming) , optoelectronics , engineering physics , electrical engineering , physics , thermodynamics , computer science , voltage reference , programming language , quantum mechanics , composite material , dropout voltage , engineering
The band gap energy Eg in silicon was found by exploiting the linear relationship between the temperature and voltage for the constant current in the temperature range of 275 K to 333 K. Within the precision of our experiment, the results obtained are in good agreement with the known value energy gap in silicon. The temperature dependence of Eg for silicon has also been studied.