Band Gap Energy in Silicon | Zendy

Jeremy Low | Zendy; Michael Kreider | Zendy; Drew P. Pulsifer | Zendy; A. R. Jones | Zendy; Tariq Gilani | Zendy

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Band Gap Energy in Silicon

Author(s) -

Jeremy Low,

Michael Kreider,

Drew P. Pulsifer,

A. R. Jones,

Tariq Gilani

Publication year - 2008

Publication title -

american journal of undergraduate research

Language(s) - English

Resource type - Journals

eISSN - 2375-8732

pISSN - 1536-4585

DOI - 10.33697/ajur.2008.010

Subject(s) - silicon , band gap , range (aeronautics) , materials science , energy (signal processing) , silicon bandgap temperature sensor , voltage , atmospheric temperature range , constant (computer programming) , condensed matter physics , optoelectronics , electrical engineering , physics , thermodynamics , computer science , voltage reference , programming language , quantum mechanics , composite material , dropout voltage , engineering

The band gap energy Eg in silicon was found by exploiting the linear relationship between the temperature and voltage for the constant current in the temperature range of 275 K to 333 K. Within the precision of our experiment, the results obtained are in good agreement with the known value energy gap in silicon. The temperature dependence of Eg for silicon has also been studied.

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