Open AccessPhysico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase
Author(s) -
A. Sh. Razzakov,
A. Matnazarov,
M. Latipova,
A. Japakov
Publication year - 2020
Publication title -
bûlletenʹ nauki i praktiki
Language(s) - English
Resource type - Journals
ISSN - 2414-2948
DOI - 10.33619/2414-2948/58/01
Subject(s) - epitaxy , solid solution , materials science , substrate (aquarium) , tin , gallium , semiconductor , phase (matter) , liquid phase , crystal growth , chemical engineering , crystallography , optoelectronics , nanotechnology , chemistry , metallurgy , thermodynamics , organic chemistry , layer (electronics) , oceanography , physics , geology , engineering
. Single-crystal films of a graded-gap solid solution Si1-xGex (0 <x <1) was grown on Si substrates from limited tin, gallium solution-melt. Accordingly, liquid phase epitaxy method was applied in the process. The formation of dislocations, grown under various technological conditions, at the substrate-film interface along the growth direction of the Si1-xGex solid solution was studied. Optimal technological growth modes for obtaining crystalline perfect epitaxial layers and structures are given.