Open AccessRe-emitting oxide – copper iodide(I) films for silicone solar cells
Author(s) -
Г. П. Шевченко,
Юлия Валентиновна Бокшиц,
Екатерина Алексеевна Ковель,
Надежда Владимировна Шинкевич,
А. В. Мазаник,
D. Sherban,
Николай Николаевич Курмей,
Л. И. Брук,
П. П. Першукевич
Publication year - 2021
Publication title -
žurnal belorusskogo gosudarstvennogo universiteta. himiâ
Language(s) - English
Resource type - Journals
eISSN - 2617-3980
pISSN - 2520-257X
DOI - 10.33581/2520-257x-2021-1-50-57
Subject(s) - photocurrent , photoelectric effect , quantum efficiency , materials science , silicon , oxide , energy conversion efficiency , photoconductivity , optoelectronics , solar cell , range (aeronautics) , radiation , composition (language) , dielectric , optics , composite material , metallurgy , physics , linguistics , philosophy
The effect of Al2O3 – CuI oxide films on the photoelectric parameters of silicon solar cells (SCs) has been studied. The largest increase in the external quantum efficiency of photoelectric conversion of SCs in the near UV range is observed for monolayer films of the 50Al2O3 – 50CuI composition, heat-treated at 280 °C for 30 min, which corresponds to a relative increase in the photocurrent upon exposure to radiation of spectral composition AM1.5 (1000 W/m2 ) by more than 35 %. This confirms the efficiency of using re-emitting Al2O3 – CuI films to increase the efficiency of silicon SCs.