Open AccessElectrophysical characteristics of power MOSFETs additionally implanted with nitrogen ions
Author(s) -
V. B. Odzaev,
A. N. Pyatlitski,
Uladislau S. Prasalovich,
N. S. Kovalchuk,
Yaroslav A. Soloviev,
Dmitry V. Shestovski,
Valentin Yu. Yavid,
Yuri N. Yankovski
Publication year - 2022
Publication title -
žurnal belorusskogo gosudarstvennogo universiteta. fizika
Language(s) - English
Resource type - Journals
eISSN - 2617-3999
pISSN - 2520-2243
DOI - 10.33581/2520-2243-2022-3-81-92
Subject(s) - materials science , annealing (glass) , ion implantation , threshold voltage , ion , nitrogen , dielectric , oxide , analytical chemistry (journal) , gate dielectric , gate oxide , optoelectronics , voltage , chemistry , electrical engineering , composite material , transistor , metallurgy , organic chemistry , chromatography , engineering