Open AccessSegregation-induced formation of Ge nanocrystals in silicon oxide
Author(s) -
Oleg Yu. Nalivaiko,
Arcady S. Turtsevich,
Vladimir I. Plebanovich,
П. И. Гайдук
Publication year - 2022
Publication title -
žurnal belorusskogo gosudarstvennogo universiteta. fizika
Language(s) - English
Resource type - Journals
eISSN - 2617-3999
pISSN - 2520-2243
DOI - 10.33581/2520-2243-2022-2-70-78
Subject(s) - nanocrystal , materials science , crystallite , silicon , chemical vapor deposition , polycrystalline silicon , oxide , layer (electronics) , hysteresis , grain boundary , alloy , crystallography , nanotechnology , optoelectronics , metallurgy , chemistry , condensed matter physics , thin film transistor , microstructure , physics