Open AccessTHE IMPACT OF OSCILLATOR STRENGTH ON SILICON NANOCRYSTALS (SiNCS)
Author(s) -
Ishaya Iliyasu,
Abbas Dalhatu Umar,
Abubakar Yusuf,
Aliyu Muhammad,
Williams Danbaba
Publication year - 2020
Publication title -
international journal of engineering applied science and technology
Language(s) - English
Resource type - Journals
ISSN - 2455-2143
DOI - 10.33564/ijeast.2020.v05i08.007
Subject(s) - oscillator strength , materials science , quantum dot , photoluminescence , optoelectronics , physics , quantum mechanics , spectral line
A theoretical simulation is used to estimate theimpact of oscillator strength on Silicon nanocrystals(SiNCs) using Matlab program. The Photoluminescenceintensity oscillator dependence as well as Oscillatorstrength as a function of energy band gap and photonenergy is studied. The results obtained, shows thatoscillator strength of SiNCs behavior is in compliance withthe quantum confinement effects which in successiondetermine the optical properties of SiNCs, and also showsthat the oscillator strength in Nano-Crystallites varies withthe amount of confinement and also with the surroundingenvironment due to change in dielectric constant. Themodels used in this work can be applied to othernanocrystals semiconductor materials