Open AccessON SOME OVERVIEWS OF HETEROJUNCTION BIPOLAR TRANSISTOR TECHNOLOGY: A STUDY
Author(s) -
Arpita Santra,
Arnima Das,
Abhijit Ghosh
Publication year - 2019
Publication title -
international journal of engineering applied science and technology
Language(s) - English
Resource type - Journals
ISSN - 2455-2143
DOI - 10.33564/ijeast.2019.v04i02.018
Subject(s) - bipolar junction transistor , heterojunction bipolar transistor , heterostructure emitter bipolar transistor , optoelectronics , materials science , heterojunction , computer science , transistor , psychology , electrical engineering , engineering , voltage
Heterojunction Bipolar Transistor (HBT)[1] technology has become a serious player in wireless communication, power electronic equipment, mixer, and frequency synthesizer applications. HBTs extend the benefits of semiconductor bipolar transistors to considerably higher frequencies. Since the middle -1980s, HBT technology development has targeted on reducing value and rising dependability that successively, led to numerous commercial products, such as prescalers, gate arrays, digital-to-analog converters, mux/demux chip sets, logarithmic amplifiers, RF chip sets for CDMA wireless communication systems, and power amplifiers for cellular communications. They have become a natural alternative for terribly high frequency military applications requiring a high current drive, high transconductance, high voltage handling capability, low noise oscillator, and uniform threshold voltage. Emerging HBT technologies enable the combination of an outsized amount of high performance RF circuits and high speed digital circuits on one chip. In these research paper efforts has been given to obtain better results with a novel heterojunction. Keywords— Heterojunction, transconductance, gain,