Open AccessExploring Noise-Effect on the Intraband Transition Lifetime of Impurity Doped Quantum Dots
Author(s) -
Sekh Md. Arif,
Aindrila Bera,
Arijit Ghosh,
Manas Ghosh
Publication year - 2020
Publication title -
biointerface research in applied chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.216
H-Index - 11
ISSN - 2069-5837
DOI - 10.33263/briac112.86398653
Subject(s) - quantum dot , noise (video) , additive white gaussian noise , white noise , dopant , gaussian noise , impurity , doping , multiplicative noise , multiplicative function , gaussian , maximization , statistical physics , condensed matter physics , optoelectronics , materials science , physics , computer science , mathematics , quantum mechanics , telecommunications , algorithm , mathematical analysis , mathematical optimization , artificial intelligence , signal transfer function , transmission (telecommunications) , analog signal , image (mathematics)
Current inspection analyzes the role played by Gaussian white noise on intraband transition lifetime (ITL) of quantum dot (QD) containing an impurity. In this regard, the ITL profiles are scrutinized following the variation of several pertinent physical quantities with and without noise. Two different avenues viz. 'additive' and 'multiplicative' have been explored by which noise may be introduced to the system. Often, the presence of noise happens to alter the attributes of the ITL profiles (steady rise, steady fall, and maximization) from that under a noise-free state. And such alterations also prominently depend on the additive/multiplicative nature of noise. The present study clearly manifests the attainment of enhanced ITL of QDs containing dopants under applied Gaussian white additive noise having strength in the neighborhood of a typical value. The findings seem to have important bearings in designing and manufacturing QD-based optoelectronic devices where the role of noise needs to be acknowledged.