Open AccessAnalysis of effects of dangling-bond defects in doped a-Si:H layers in heterojunction silicon solar cells with different electron affinities of ITO contacts
Author(s) -
Jošt Balent,
F. Smole,
Marko Topič,
Janez Krč
Publication year - 2022
Publication title -
informacije midem - journal of microelectronics electronic components and materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.122
H-Index - 18
eISSN - 1855-4709
pISSN - 0352-9045
DOI - 10.33180/infmidem2022.206
Subject(s) - dangling bond , materials science , doping , optoelectronics , heterojunction , amorphous silicon , band gap , electron affinity (data page) , silicon , open circuit voltage , solar cell , energy conversion efficiency , crystalline silicon , voltage , chemistry , electrical engineering , organic chemistry , molecule , engineering
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