z-logo
open-access-imgOpen Access
Reduction of Random Dopant Fluctuation-induced Variation in Junctionless FinFETs via Negative Capacitance Effect
Author(s) -
Bo Liu,
Xianlong Chen,
Ziqiang Xie,
Mengxue Guo,
Mengjie Zhao,
Weifeng Lyu
Publication year - 2021
Publication title -
informacije midem - journal of microelectronics electronic components and materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.122
H-Index - 18
eISSN - 1855-4709
pISSN - 0352-9045
DOI - 10.33180/infmidem2021.405
Subject(s) - threshold voltage , dopant , materials science , capacitance , subthreshold swing , condensed matter physics , standard deviation , optoelectronics , negative impedance converter , monte carlo method , transistor , doping , voltage , physics , mathematics , statistics , quantum mechanics , electrode , voltage source

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom