Open AccessModeling of Static Negative Bias Temperature Stressing in p-channel VDMOSFETs using Least Square Method
Author(s) -
Nikola Mitrović,
Danijel Danković,
Branislav Ranđelović,
Z. Prijić,
N. Stojadinović
Publication year - 2020
Publication title -
informacije midem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.122
H-Index - 18
eISSN - 1855-4709
pISSN - 0352-9045
DOI - 10.33180/infmidem2020.305
Subject(s) - negative bias temperature instability , threshold voltage , materials science , electronic circuit , square (algebra) , voltage , channel (broadcasting) , stress (linguistics) , biasing , oxide , power (physics) , equivalent circuit , condensed matter physics , electronic engineering , electrical engineering , physics , thermodynamics , engineering , mathematics , transistor , linguistics , philosophy , geometry , metallurgy