z-logo
open-access-imgOpen Access
A Novel Design of Heterojunction Double Ferroelectric MOSFET (HDF-MOSFET) with Steep Subthreshold Slope and High Ion/Ioff Current Ratio
Publication year - 2022
Publication title -
journal of robotics and automation research
Language(s) - English
Resource type - Journals
ISSN - 2831-6789
DOI - 10.33140/jrar.03.02.11
Subject(s) - materials science , ferroelectricity , optoelectronics , subthreshold slope , mosfet , heterojunction , dielectric , electrical engineering , transistor , voltage , engineering

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom