Open AccessFirst-principles Simulations of Tunneling FETs Based on van der Waals MoTe2/SnS2 Heterojunctions with Gate-to-drain Overlap Design
Author(s) -
Kun Luo,
Kui Gong,
Jiangchai Chen,
Shengli Zhang,
Yongliang Li,
Huaxiang Yin,
Zhenhua Wu
Publication year - 2020
Publication title -
journal of microelectronic manufacturing
Language(s) - English
Resource type - Journals
ISSN - 2578-3769
DOI - 10.33079/jomm.20030405
Subject(s) - quantum tunnelling , heterojunction , van der waals force , materials science , optoelectronics , condensed matter physics , nanotechnology , physics , quantum mechanics , molecule
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom