z-logo
open-access-imgOpen Access
Silicon Nitride Etch via Oxidation Reaction in Fluorocarbon/Oxygen Plasma: A First-Principle Study Based on Equidistant Model
Author(s) -
Yu-Hao Tsai,
Du Zhang,
Mingmei Wang
Publication year - 2018
Publication title -
journal of microelectronic manufacturing
Language(s) - English
Resource type - Journals
ISSN - 2578-3769
DOI - 10.33079/jomm.18010102
Subject(s) - silicon nitride , fluorocarbon , equidistant , plasma , oxygen , materials science , chemical engineering , nitride , chemistry , silicon , nanotechnology , optoelectronics , composite material , organic chemistry , layer (electronics) , mechanical engineering , physics , engineering , quantum mechanics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here