Open AccessHigh Efficiency, Good phase linearity 0.18 µm CMOS Power Amplifier for MBAN-UWB Applications
Author(s) -
Hamed Mosalam,
A. G. GadAllah
Publication year - 2021
Publication title -
international journal of electrical and computer engineering systems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.141
H-Index - 4
eISSN - 1847-7003
pISSN - 1847-6996
DOI - 10.32985/ijeces.12.3.2
Subject(s) - amplifier , linearity , cmos , ripple , power (physics) , electronic engineering , power added efficiency , power gain , electrical engineering , materials science , rf power amplifier , voltage , engineering , physics , quantum mechanics
This paper presents the design of 3.1-10.6 GHz class AB power amplifier (PA) suitable for medical body area network (MBAN) Ultra-Wide Band (UWB) applications in TSMC 0.18 µm technology. An optimization technique to simultaneously maximize power added efficiency(PAE) and minimize group delay variation is employed. Source and Load-pull contours are used to design inter and output stage matching circuits. The post-layout simulation results indicated that the designed PA has a maximum PAE of 32 % and an output 1-dB compression of 11 dBm at 4 GHz. In addition, a small group delay variation of ± 50 ps was realized over the whole required frequency band . Moreover, the proposed PA has small signal power gain (S21) of 12.5 dB with ripple less than 1.5 dB over the frequency range between 3.1 GHz to 10.6 GHz, while consuming 36 mW.