Open AccessThe features of deformation-stimulated RbI luminescence
Author(s) -
L. Myasnikova,
A. Maratova,
K. Shunkeyev
Publication year - 2021
Publication title -
eurasian journal of physics and functional materials
Language(s) - English
Resource type - Journals
eISSN - 2616-8537
pISSN - 2522-9869
DOI - 10.32523/ejpfm.2021050406
Subject(s) - luminescence , exciton , crystal (programming language) , recombination , materials science , relaxation (psychology) , spectroscopy , crystallographic defect , biexciton , photoluminescence , molecular physics , atomic physics , chemistry , crystallography , condensed matter physics , optoelectronics , physics , psychology , social psychology , biochemistry , quantum mechanics , computer science , gene , programming language
This paper studies deformation-stimulated features of radiative relaxation of self-trapped excitons and recombination assembly of exciton-like luminescence in RbI crystal. Methods of research were luminescence and thermal activation spectroscopy. The identity of the mechanism of manifestation of the X -ray luminescence, tunnel luminescence and thermally stimulated luminescence spectra were found in the elastically deformed RbI crystal, interpreted by the luminescence of self-trapped exciton, tunnel recharge of F ′, V K -pairs and thermally stimulated recombination of e − , V K -centres, respectively.The temperatures of the maximum destruction peaks of thermally stimulated luminescence, their spectral composition and activation energies were determined experimentally, on the basis of which the mechanisms of recombination assembly of exciton-like luminescences in a RbI crystal were interpreted. Uniaxial elastic deformation leads to the effective formation of point radiation defects ( F ′, H A , V K -centers) in comparison with an unbroken lattice, where the predominant mechanism is the association of interstitial atoms ( H -centres) with the formation of I 3 − -centres.