Open AccessInfluence of Cu+ impurity on the efficiency of creation of electron-hole trapping centers in irradiated Na2SO4 − Cu crystals
Author(s) -
Т.N. Nurakhmetov,
B.N. Yussupbekova,
A.M. Zhunusbekov,
D.H. Daurenbekov,
B.M. Sadykova,
K.B. Zhangylyssov,
T.T. Alibay,
D.A. Tolekov
Publication year - 2021
Publication title -
eurasian journal of physics and functional materials
Language(s) - English
Resource type - Journals
eISSN - 2616-8537
pISSN - 2522-9869
DOI - 10.32523/ejpfm.2021050305
Subject(s) - trapping , impurity , annealing (glass) , electron , materials science , electron beam processing , lattice (music) , atomic physics , irradiation , recombination , crystal (programming language) , molecular physics , chemistry , physics , ecology , biochemistry , organic chemistry , gene , acoustics , nuclear physics , composite material , biology , quantum mechanics , computer science , programming language
The mechanisms of creation of impurity and intrinsic electron-hole trapping centers in Na2SO4 − Cu crystals have been investigated by spectroscopic methods. It is shown that impurity and intrinsic electron-hole trapping centers in the crystal lattice Na2SO4 − Cu are created in the same energy distances approximately 3.87-4.0 eV and 4.43-4.5 eV. During the annealing of electron-hole trapping centers, the energy of the recombination processes is transferred to impurities.