Open AccessThe scattering time of electrons in a GaAs/InGaAs/GaAs quantum well including temperature and exchange-correlation effects
Author(s) -
Truong Van Tuan,
Nguyễn Quốc Khánh,
Vo Van Tai
Publication year - 2020
Publication title -
khoa học và công nghệ: tự nhiên
Language(s) - English
Resource type - Journals
ISSN - 2588-106X
DOI - 10.32508/stdjns.v3i3.638
Subject(s) - scattering , condensed matter physics , surface roughness , impurity , electron density , electron , quantum well , fermi gas , materials science , ionized impurity scattering , physics , optics , quantum mechanics , laser , composite material
The ratio of the scattering and single-particle relaxation time of a quasi-two-dimensional electron gas (Q2DEG) in a finite lattice-mismatched GaAs/InGaAs/GaAs quantum well was investigate at zero and finite temperatures, taking into account the exchange-correlation effects via a local-field correction with three approximations for the LFC, G = 0, GH, and GGA. We studied the dependence of the surface roughness, roughness-induced piezoelectric, remote and homogenous background charged impurity scattering on the carrier density and quantum well width. In the case of zero temperature and Hubbard local-field correction our results reduced to those of different theoretical calculations. At low density, the exchange-correlation effects depend strongly on the ratio τt/τs. While at high density many-body effects due to exchange and correlation considerably modified the ratio of the scattering and single-particle relaxation time. We found that, for densities and temperatures considered T = 0,3TF in this study, the temperature affected weakly on the time ratio for four scatterings. Furthermore, with the change of quantum well width, the effect of LFC and temperatures act on the ratio τt/τs are negligible for the roughness-induced piezoelectric and remote charged impurity scattering, and are notable for the surface roughness and homogenous background charged impurity scattering.